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www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89368
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 27-Oct-10
VFT2045CBP
Vishay General Semiconductor
New Product
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ≤
40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
IF
= 5 A
TA
= 25 °C
= 10 A 0.49 0.58
VF
(1)
0.44 -
V
IF
IF
= 5 A
TA
= 125 °C
= 10 A 0.41 0.52
0.33 -
IF
Reverse current per diode VR
= 45 V
TA
= 25 °C
IR
(2)
= 125 °C 10 30 mA
- 2000 μA
TA
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VFT2045CBP UNIT
Typical thermal resistance
per diode
R
per device 4.5θJC
6.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
ITO-220AB VFT2045CBP-M3/4W 1.76 4W 50/tube Tube
Case Temperature (°C)
A
v
erage For
w
ard Rectified C
u
rrent (A)
24
20
16
12
4
0
80 100 120 130 140 15090 110
8
0
3
4
5
6
0246 10128
Average Forward Current (A)
A
v
erage Po
w
er Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = tp/T tp
T
1
2
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